Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 35A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | STripFET™ II |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Max Power Dissipation | 100W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | I2PAK (TO-262) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|