STB36NF06LT4

STMicroelectronics

STB36NF06LT4

Datasheet

Analog & Power

MOSFET N-CH 60V 30A D2PAK

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±18V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Max Power Dissipation70W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

Environmental

Operating Temperature-55°C ~ 175°C (TJ)