STB34NM60N

STMicroelectronics

STB34NM60N

Datasheet

Analog & Power

MOSFET N-CH 600V 29A D2PAK

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 14.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2722 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesMDmesh™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Max Power Dissipation250W (Tc)

Mechanical

Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2PAK)

Environmental

Operating Temperature150°C (TJ)