STB30NF10T4

STMicroelectronics

STB30NF10T4

Datasheet

Analog & Power

MOSFET N-CH 100V 35A D2PAK

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1180 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Max Power Dissipation115W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

Environmental

Operating Temperature-55°C ~ 175°C (TJ)