STB21NK50Z

STMicroelectronics

STB21NK50Z

Datasheet

Analog & Power

MOSFET N-CH 500V 17A D2PAK

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs270mOhm @ 8.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesAutomotive, AEC-Q101, SuperMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 100µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Max Power Dissipation190W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

Environmental

Operating Temperature150°C(TJ)