STB18N55M5

STMicroelectronics

STB18N55M5

Analog & Power

MOSFET N-CH 550V 16A D2PAK

ObsoleteTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs192mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1260 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesMDmesh™ V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage550 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Max Power Dissipation110W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2PAK)

Environmental

Operating Temperature150°C (TJ)