STB16NF06LT4

STMicroelectronics

STB16NF06LT4

Datasheet

Analog & Power

MOSFET N-CH 60V 16A D2PAK

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds345 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Max Power Dissipation45W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

Environmental

Operating Temperature-55°C~175°C(TJ)