Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3mOhm @ 40A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 25 V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | DeepGATE™, STripFET™ VI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max Power Dissipation | 110W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2PAK) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|