SCTWA90N65G2V-4

STMicroelectronics

SCTWA90N65G2V-4

Datasheet

Analog & Power

TRANS SJT N-CH 650V 119A HIP247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 50A, 18V
Base Product NumberSCTWA90
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -10V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C119A (Tc)
Max Power Dissipation565W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageHiP247™ Long Leads

Environmental

Operating Temperature-55°C~200°C(TJ)