SCTW40N120G2VAG

Name: SCTW40N120G2VAG
Brand: STMicroelectronics

Analog & Power

SICFET N-CH 1200V 33A HIP247

ActiveTO-247-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	105mOhm @ 20A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 800 V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Product Status	Active
Series	Automotive, AEC-Q101
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA

Drain-to-Source Voltage	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Max Power Dissipation	290W (Tc)

Operating Temperature	-55°C~200°C(TJ)