SCTW35N65G2V

STMicroelectronics

SCTW35N65G2V

Datasheet

Analog & Power

SICFET N-CH 650V 45A HIP247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs67mOhm @ 20A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 400 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -10V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Max Power Dissipation240W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageHiP247™

Environmental

Operating Temperature-55°C~200°C(TJ)