SCTL35N65G2V

STMicroelectronics

SCTL35N65G2V

Datasheet

Analog & Power

TRANS SJT N-CH 650V PWRFLAT HV

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs67mOhm @ 20A, 20V
Base Product NumberSCTL35
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 400 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -10V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Max Power Dissipation417W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (8x8) HV

Environmental

Operating Temperature-55°C~175°C(TJ)