Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 25 V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | STripFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tc) |
| Max Power Dissipation | 1W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|