General
| Output Configuration | Phototransistor |
|---|---|
| Manufacturer | Sharp Microelectronics |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Response Time | 35µs, 35µs |
| Sensing Distance | 0.063" (1.6mm) |
| Sensing Method | Through-Beam |
| Type | Unamplified |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
|---|---|
| Current - Collector (Ic) (Max) | 20 mA |
| Current - DC Forward (If) (Max) | 50 mA |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | 4-SMD |
Environmental
| Operating Temperature | -25°C~85°C |
|---|