Structured electrical, mechanical and environmental parameters from imported product attributes.
| Gate Charge | 210 nC |
|---|---|
| IGBT Type | NPT and Trench |
| Input Type | Standard |
| Manufacturer | SemiQ |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 320 ns |
| Switching Energy | 1.61mJ (on), 530µJ (off) |
| Td (on/off) @ 25°C | 25ns/166ns |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 212 W |
| Package | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3PN |
| Operating Temperature | -55°C~150°C(TJ) |
|---|