General
| Base Product Number | GP3D010 |
|---|---|
| Capacitance @ Vr, F | 419pF @ 1V, 1MHz |
| Manufacturer | SemiQ |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | Amp+™ |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package / Case | TO-247-2 |
|---|---|
| Supplier Device Package | TO-247-2 |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|