K4F8E304HB-MGCJ

Samsung Semiconductor, Inc

K4F8E304HB-MGCJ

Memory & Storage

LPDDR4 8Gb x32 3733 Mbps 1.1v 20

Active200-TFBGAMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeVolatile
ManufacturerSamsung Semiconductor, Inc.
Mounting TypeSurface Mount
Product StatusActive

Electrical

Memory Size8Gbit
Memory FormatDRAM
Memory InterfaceParallel
Clock Frequency1866 MHz
Supply Voltage1.1V
Memory Organization256M x 32

Mechanical

PackageTray
Package / Case200-TFBGA

Environmental

Operating Temperature-25°C ~ 85°C