K4B4G1646E-BYK000

Samsung Semiconductor, Inc

K4B4G1646E-BYK000

Memory & Storage

DDR3-1600 4GB (256MX16)1.25NS CL

Active96-TFBGAMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeVolatile
ManufacturerSamsung Semiconductor, Inc.
Mounting TypeSurface Mount
Product StatusActive

Electrical

Memory Size4Gbit
Memory FormatDRAM
Memory InterfaceParallel
Clock Frequency800 MHz
Supply Voltage1.35V
Memory Organization256M x 16

Mechanical

PackageTray
Package / Case96-TFBGA

Environmental

Operating Temperature0°C ~ 95°C