UT6MA2TCR

Rohm Semiconductor

UT6MA2TCR

Datasheet

Analog & Power

MOSFET N/P-CH 30V 4A HUML2020L8

Active6-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
Base Product NumberUT6MA2
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs4.3nC @ 10V, 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 15V, 305pF @ 15V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Power - Max2W (Ta)

Mechanical

Package / Case6-PowerUDFN
Supplier Device PackageHUML2020L8

Environmental

Operating Temperature150°C (TJ)