US6K2TR

Rohm Semiconductor

US6K2TR

Datasheet

Analog & Power

MOSFET 2N-CH 30V 1.4A TUMT6

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs240mOhm @ 1.4A, 10V
Base Product NumberUS6K2
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 10V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C1.4A
Power - Max1W

Mechanical

Package / Case6-SMD, Flat Leads
Supplier Device PackageTUMT6

Environmental

Operating Temperature150°C (TJ)