TT8U1TR

Rohm Semiconductor

TT8U1TR

Datasheet

Analog & Power

MOSFET P-CH 20V 2.4A 8TSST

Discontinued8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 2.4A, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Max Power Dissipation1.25W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device Package8-TSST

Environmental

Operating Temperature150°C(TJ)