TT8K11TCR

Rohm Semiconductor

TT8K11TCR

Analog & Power

MOSFET 2N-CH 30V 3A 8TSST

Discontinued8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs71mOhm @ 3A, 10V
Base Product NumberTT8K11
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 10V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1A

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C3A
Power - Max1W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead
Supplier Device Package8-TSST

Environmental

Operating Temperature150°C (TJ)