SP8M51HZGTB

Rohm Semiconductor

SP8M51HZGTB

Datasheet

Analog & Power

MOSFET N/P-CH 100V 3A/2.5A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Base Product NumberSP8M51
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 5V, 12.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 25V, 1550pF @ 25V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C3A (Ta), 2.5A (Ta)
Power - Max2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature150°C (TJ)