SP8M31HZGTB

Rohm Semiconductor

SP8M31HZGTB

Datasheet

Analog & Power

MOSFET N/P-CH 60V 4.5A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
Base Product NumberSP8M3
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs7nC @ 5V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 10V, 2500pF @ 10V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Power - Max2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature150°C (TJ)