SCT3120AW7TL

Rohm Semiconductor

SCT3120AW7TL

Datasheet

Analog & Power

SICFET N-CH 650V 21A TO263-7

ActiveTO-263-8, D²Pak (7 Leads + Tab), TO-263CAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs156mOhm @ 6.7A, 18V
Base Product NumberSCT3120
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 500 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -4V
Vgs(th) (Max) @ Id5.6V @ 3.33mA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Max Power Dissipation100W

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device PackageTO-263-7

Environmental

Operating Temperature175°C(TJ)