SCT3105KW7TL

Rohm Semiconductor

SCT3105KW7TL

Datasheet

Analog & Power

SICFET N-CH 1200V 23A TO263-7

ActiveTO-263-8, D2PAK (7 Leads + Tab), TO-263CAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs137mOhm @ 7.6A, 18V
Base Product NumberSCT3105
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds574 pF @ 800 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -4V
Vgs(th) (Max) @ Id5.6V @ 3.81mA

Electrical

Drain-to-Source Voltage1200 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Max Power Dissipation125W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device PackageTO-263-7

Environmental

Operating Temperature175°C (TJ)