SCT2H12NYTB

Name: SCT2H12NYTB
Brand: Rohm Semiconductor

Analog & Power

SICFET N-CH 1700V 4A TO268

ActiveTO-268-3, D3PAK (2 Leads + Tab), TO-268AAAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	184 pF @ 800 V
Manufacturer	Rohm Semiconductor
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -6V
Vgs(th) (Max) @ Id	4V @ 410µA

Drain-to-Source Voltage	1700 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Max Power Dissipation	44W (Tc)

Package / Case	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268

Operating Temperature	175°C (TJ)