General
| Capacitance @ Vr, F | 365pF @ 1V, 1MHz |
|---|---|
| Manufacturer | Rohm Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220ACFP |
Environmental
| Operating Temperature - Junction | 175°C |
|---|