RYE002N05TCL

Rohm Semiconductor

RYE002N05TCL

Datasheet

Analog & Power

MOSFET N-CH 50V 200MA EMT3

DiscontinuedSC-75, SOT-416Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.2Ohm @ 200mA, 4.5V
Base Product NumberRYE002
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds26 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id800mV @ 1mA

Electrical

Drain-to-Source Voltage50 V
Drive Voltage (Max Rds On, Min Rds On)0.9V, 4.5V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Max Power Dissipation150mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-75, SOT-416
Supplier Device PackageEMT3

Environmental

Operating Temperature150°C(TJ)