RYC002N05T316

Rohm Semiconductor

RYC002N05T316

Datasheet

Analog & Power

MOSFET N-CHANNEL 50V 200MA SST3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.2Ohm @ 200mA, 4.5V
Base Product NumberRYC002
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds26 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id800mV @ 1mA

Electrical

Drain-to-Source Voltage50 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Max Power Dissipation350mW (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSST3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)