RW4E065GNTCL1

Rohm Semiconductor

RW4E065GNTCL1

Datasheet

Analog & Power

NCH 30V 6.5A, HEML1616L7, POWER

Active6-PowerUFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22.5mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

Package / Case6-PowerUFDFN
Supplier Device PackageDFN1616-7T

Environmental

Operating Temperature150°C (TJ)