RW4C045BCTCL1

Rohm Semiconductor

RW4C045BCTCL1

Datasheet

Analog & Power

PCH -20V -4.5A POWER MOSFET: RW4

Active6-PowerUFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs56mOhm @ 4.5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-PowerUFDFN
Supplier Device PackageDFN1616-7T

Environmental

Operating Temperature150°C(TJ)