RW1E014SNT2R

Rohm Semiconductor

RW1E014SNT2R

Datasheet

Analog & Power

MOSFET N-CH 30V 1.4A WEMT6

Obsolete6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs240mOhm @ 1.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds70 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Max Power Dissipation400mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Supplier Device Package6-WEMT

Environmental

Operating Temperature150°C (TJ)