RW1A025APT2CR

Rohm Semiconductor

RW1A025APT2CR

Datasheet

Analog & Power

MOSFET P-CH 12V 2.5A WEMT6

Obsolete6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs62mOhm @ 2.5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 6 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-8V
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Max Power Dissipation400mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Supplier Device Package6-WEMT

Environmental

Operating Temperature150°C (TJ)