RV8L002SNHZGG2CR

Rohm Semiconductor

RV8L002SNHZGG2CR

Datasheet

Analog & Power

MOSFET N-CH 60V 250MA DFN1010-3W

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4Ohm @ 250mA, 10V
Base Product NumberRV8L002
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds15 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageDFN1010-3W

Environmental

Operating Temperature150°C(TJ)