RV8C010UNHZGG2CR

Rohm Semiconductor

RV8C010UNHZGG2CR

Datasheet

Analog & Power

MOSFET N-CH 20V 1A DFN1010-3W

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs470mOhm @ 500mA, 4.5V
Base Product NumberRV8C010
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation1W

Mechanical

PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageDFN1010-3W

Environmental

Operating Temperature150°C(TJ)