RV4C020ZPHZGTCR1

Rohm Semiconductor

RV4C020ZPHZGTCR1

Datasheet

Analog & Power

PCH -20V -2.0A SMALL SIGNAL MOSF

Active6-PowerWFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs260mOhm @ 2A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds80 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.3V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature150°C (TJ)
QualificationAEC-Q101