RV2C010UNT2L

Rohm Semiconductor

RV2C010UNT2L

Datasheet

Analog & Power

MOSFET N-CH 20V 1A DFN1006-3

ActiveSC-101, SOT-883Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs470mOhm @ 500mA, 4.5V
Base Product NumberRV2C010
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation400mW (Ta)

Mechanical

Package / CaseSC-101, SOT-883
Supplier Device PackageVML1006

Environmental

Operating Temperature150°C (TJ)