RU1C002ZPTCL

Rohm Semiconductor

RU1C002ZPTCL

Datasheet

Analog & Power

MOSFET P-CH 20V 200MA UMT3F

ActiveSC-85Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 200mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds115 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 100µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Max Power Dissipation150mW (Ta)

Mechanical

Package / CaseSC-85
Supplier Device PackageUMT3F

Environmental

Operating Temperature150°C (TJ)