Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 67mOhm @ 2.5A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| Manufacturer | Rohm Semiconductor |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Max Power Dissipation | 800mW (Ta) |
| Supplier Device Package | TUMT3 |
|---|
| Grade | Automotive |
|---|---|
| Operating Temperature | 150°C |
| Qualification | AEC-Q101 |