RSD150N06TL

Rohm Semiconductor

RSD150N06TL

Datasheet

Analog & Power

MOSFET N-CH 60V 15A CPT3

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds930 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Max Power Dissipation20W (Tc)

Mechanical

Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageCPT3

Environmental

Operating Temperature150°C (TJ)