RS3E095BNGZETB

Rohm Semiconductor

RS3E095BNGZETB

Datasheet

Analog & Power

MOSFET N-CHANNEL 30V 9.5A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.6mOhm @ 9.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta)
Max Power Dissipation2W (Tc)

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)