RS1G201ATTB1

Rohm Semiconductor

RS1G201ATTB1

Datasheet

Analog & Power

MOSFET P-CH 40V 20A/78A 8HSOP

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Base Product NumberRS1G
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6890 pF @ 20 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C20A (Ta), 78A (Tc)
Max Power Dissipation3W (Ta), 40W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-HSOP

Environmental

Operating Temperature-55°C~150°C(TJ)