RS1G120MNTB

Rohm Semiconductor

RS1G120MNTB

Datasheet

Analog & Power

MOSFET N-CH 40V 12A 8HSOP

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16.2mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 20 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation3W (Ta), 25W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-HSOP

Environmental

Operating Temperature150°C (TJ)