RS1E281BNTB1

Rohm Semiconductor

RS1E281BNTB1

Datasheet

Analog & Power

MOSFET N-CH 30V 28A/80A 8HSOP

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.3mOhm @ 28A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C28A (Ta), 80A (Tc)
Max Power Dissipation3W (Ta)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-HSOP

Environmental

Operating Temperature150°C (TJ)