RRQ030P03TR

Name: RRQ030P03TR
Brand: Rohm Semiconductor

Analog & Power

MOSFET P-CH 30V 3A TSMT6

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	75mOhm @ 3A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	480 pF @ 10 V
Manufacturer	Rohm Semiconductor
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

Drain-to-Source Voltage	30 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Max Power Dissipation	600mW (Ta)

Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSMT6 (SC-95)

Operating Temperature	150°C (TJ)