RQ7E110AJTCR

Rohm Semiconductor

RQ7E110AJTCR

Datasheet

Analog & Power

MOSFET N-CH 30V 11A TSMT8

Active8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 4.5A, 11V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2410 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 10mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation1.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

Environmental

Operating Temperature-55°C~150°C(TJ)