RQ6E030ATTCR

Rohm Semiconductor

RQ6E030ATTCR

Datasheet

Analog & Power

MOSFET P-CH 30V 3A TSMT6

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs91mOhm @ 3A, 10V
Base Product NumberRQ6E030
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)

Mechanical

Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSMT6 (SC-95)