RQ5P010SNTL

Rohm Semiconductor

RQ5P010SNTL

Datasheet

Analog & Power

MOSFET N-CH 100V 1A TSMT3

ActiveSC-96Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs520mOhm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation700mW (Ta)

Mechanical

Package / CaseSC-96
Supplier Device PackageTSMT3

Environmental

Operating Temperature150°C (TJ)