RQ3L090GNTB

Rohm Semiconductor

RQ3L090GNTB

Datasheet

Analog & Power

MOSFET N-CH 60V 9A/30A 8HSMT

Discontinued8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.9mOhm @ 9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1260 pF @ 30 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.7V @ 300µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 30A (Tc)
Max Power Dissipation2W (Ta)

Mechanical

Package / Case8-PowerVDFN
Supplier Device Package8-HSMT (3.2x3)

Environmental

Operating Temperature150°C (TJ)